We demonstrate, for the first time, laser diodes with anetched facet fabricated by chemically assisted ion beametching, producing 1–7 W pulsed and 470mW CW output power from one facet. The devices were coated and bonded junction-side-up and tested at room temperature. The single 40 μm stripe, 300 μm-long devices exhibit 94 mA threshold current and differential quantum efficiencies of 80% pulsed (78% CW).
Inspec keywords: sputter etching; semiconductor junction lasers
Other keywords:
Subjects: Surface treatment (semiconductor technology); Design of specific laser systems; Surface treatment and degradation in semiconductor technology; Lasing action in semiconductors; Semiconductor lasers
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