Fully implanted GaAs millimetre-wave mixer diode using high energy implantation

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Fully implanted GaAs millimetre-wave mixer diode using high energy implantation

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© The Institution of Electrical Engineers
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Fully implanted GaAs millimetre-wave planar mixer diodes, suitable for monolithic integration, have been fabricated and tested. Multiple energy implantation, having a maximum energy of 6 MeV, was used to form the 3 μm-thick active layer. The DC and RF characteristics were comparable to state-of-the-art GaAs mixer diodes fabricated on epitaxial layers.

Inspec keywords: solid-state microwave devices; semiconductor diodes; mixers (circuits); III-V semiconductors; gallium arsenide; ion implantation

Other keywords: millimetre-wave mixer diode; RF characteristics; DC characteristics; active layer; GaAs; high energy implantation; 6 MeV; monolithic integration

Subjects: Modulators, demodulators, discriminators and mixers; Junction and barrier diodes; Semiconductor doping; Solid-state microwave circuits and devices

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