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Enhanced Schottky barrier heights on n-type Ga0.47In0.53As by Be implantation

Enhanced Schottky barrier heights on n-type Ga0.47In0.53As by Be implantation

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© The Institution of Electrical Engineers
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Ion implantation of Be with extremely low energies of 2–5 keV into n-type GalnAs was performed, leading to shallow, fully depleted p-layers. This allowed us to achieve barrier heights of up to 0–6 eV, leading to well behaved diode characteristics.

Inspec keywords: indium compounds; ion implantation; beryllium; gallium arsenide; Schottky effect; III-V semiconductors

Other keywords: III-V semiconductor; 2 to 5 keV; diode characteristics; ion implantation; depleted p-layers; Ga0.47In0.53As:Be; Schottky barrier heights

Subjects: II-VI and III-V semiconductors; Doping and implantation of impurities; Semiconductor-metal interfaces; Surface double layers, Schottky barriers, and work functions; Semiconductor doping

References

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      • J.M. Shannon . Increasing the effective height of a Schottky barrier using low energy ion implantation. Appl. Phys. Lett. , 75 - 77
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      • H. Jürgensen , H.J. Wachs , P. Balk . GalnAs/InP heterostructures with improved homogeneity. J. Cryst. Growth , 914 - 919
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      • G.P. Schwarz , G.J. Gualtieri . Schottky barrier height enhancement on n-p + structures including free carriers. J. Electrochem. Soc. , 1266 - 1268
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      • H. Beneking , N. Grote , J. Selders . LPE growth of GaxIn1−xAs layers on InP under PH3 partial pressure and results on Mg-doping. J. Cryst. Growth , 59 - 63
    5. 5)
      • C.J. Chen , A.J. Cho , K.J. Cheng , D.A. Garbinski . Quasi Schottky barrier diode on n-Ga0.47In0.53As using a fully depleted p+-Ga0.47In0.53As layer grown by molecular beam epitaxy. Appl. Phys. Lett , 401 - 402
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      • J.M. Shannon . Control of Schottky barrier height using highly doped surface layers. Solid-State Electron. , 537 - 543
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      • J. Selders , N. Emeis , H. Beneking . Schottky-barriers on p-type GalnAs. IEEE Trans. , 605 - 609
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