Enhanced Schottky barrier heights on n-type Ga0.47In0.53As by Be implantation

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Enhanced Schottky barrier heights on n-type Ga0.47In0.53As by Be implantation

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Ion implantation of Be with extremely low energies of 2–5 keV into n-type GalnAs was performed, leading to shallow, fully depleted p-layers. This allowed us to achieve barrier heights of up to 0–6 eV, leading to well behaved diode characteristics.

Inspec keywords: indium compounds; ion implantation; beryllium; gallium arsenide; Schottky effect; III-V semiconductors

Other keywords: III-V semiconductor; 2 to 5 keV; diode characteristics; ion implantation; depleted p-layers; Ga0.47In0.53As:Be; Schottky barrier heights

Subjects: II-VI and III-V semiconductors; Doping and implantation of impurities; Semiconductor-metal interfaces; Surface double layers, Schottky barriers, and work functions; Semiconductor doping

References

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      • C.J. Chen , A.J. Cho , K.J. Cheng , D.A. Garbinski . Quasi Schottky barrier diode on n-Ga0.47In0.53As using a fully depleted p+-Ga0.47In0.53As layer grown by molecular beam epitaxy. Appl. Phys. Lett , 401 - 402
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