http://iet.metastore.ingenta.com
1887

Enhanced Schottky barrier heights on n-type Ga0.47In0.53As by Be implantation

Enhanced Schottky barrier heights on n-type Ga0.47In0.53As by Be implantation

For access to this article, please select a purchase option:

Buy article PDF
$19.95
(plus tax if applicable)
Buy Knowledge Pack
10 articles for $120.00
(plus taxes if applicable)

IET members benefit from discounts to all IET publications and free access to E&T Magazine. If you are an IET member, log in to your account and the discounts will automatically be applied.

Learn more about IET membership 

Recommend Title Publication to library

You must fill out fields marked with: *

Librarian details
Name:*
Email:*
Your details
Name:*
Email:*
Department:*
Why are you recommending this title?
Select reason:
 
 
 
 
 
Electronics Letters — Recommend this title to your library

Thank you

Your recommendation has been sent to your librarian.

Ion implantation of Be with extremely low energies of 2–5 keV into n-type GalnAs was performed, leading to shallow, fully depleted p-layers. This allowed us to achieve barrier heights of up to 0–6 eV, leading to well behaved diode characteristics.

References

    1. 1)
      • J.M. Shannon . Increasing the effective height of a Schottky barrier using low energy ion implantation. Appl. Phys. Lett. , 75 - 77
    2. 2)
      • C.J. Chen , A.J. Cho , K.J. Cheng , D.A. Garbinski . Quasi Schottky barrier diode on n-Ga0.47In0.53As using a fully depleted p+-Ga0.47In0.53As layer grown by molecular beam epitaxy. Appl. Phys. Lett , 401 - 402
    3. 3)
      • H. Beneking , N. Grote , J. Selders . LPE growth of GaxIn1−xAs layers on InP under PH3 partial pressure and results on Mg-doping. J. Cryst. Growth , 59 - 63
    4. 4)
      • H. Jürgensen , H.J. Wachs , P. Balk . GalnAs/InP heterostructures with improved homogeneity. J. Cryst. Growth , 914 - 919
    5. 5)
      • J. Selders , N. Emeis , H. Beneking . Schottky-barriers on p-type GalnAs. IEEE Trans. , 605 - 609
    6. 6)
      • J.M. Shannon . Control of Schottky barrier height using highly doped surface layers. Solid-State Electron. , 537 - 543
    7. 7)
      • G.P. Schwarz , G.J. Gualtieri . Schottky barrier height enhancement on n-p + structures including free carriers. J. Electrochem. Soc. , 1266 - 1268
http://iet.metastore.ingenta.com/content/journals/10.1049/el_19870513
Loading

Related content

content/journals/10.1049/el_19870513
pub_keyword,iet_inspecKeyword,pub_concept
6
6
Loading
This is a required field
Please enter a valid email address