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Nondiffusion and 1.54/μm luminescence of erbium implanted in InP

Nondiffusion and 1.54/μm luminescence of erbium implanted in InP

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Published

Erbium impurities were implanted in indium phosphide. The Er depth distributions are given for nonannealed and annealed substrates. It is shown that erbium has a very small diffusion coefficient, if any, in InP. The photoluminescence spectra show, after annealing at high temperature, the main erbium emission centred at 1.536μm. This emission is stronger after annealing at 700°C. Our results are the first evidence showing l.54μm emission at room temperature.

Inspec keywords: III-V semiconductors; annealing; photoluminescence; indium compounds; erbium; ion implantation

Other keywords: annealing temperature; InP:Er; annealed substrates; photoluminescence spectra; diffusion coefficient; ion implantation; 700 C; emission at room temperature; 1.54 micron

Subjects: Semiconductor doping; Photoluminescence in other inorganic materials; Luminescent materials; II-VI and III-V semiconductors; Semiconductor technology

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