Gigabit optical transmitter GaAs MESFET IC

Access Full Text

Gigabit optical transmitter GaAs MESFET IC

For access to this article, please select a purchase option:

Buy article PDF
£12.50
(plus tax if applicable)
Add to cart
Buy Knowledge Pack
10 articles for £75.00
(plus taxes if applicable)
Add to cart

IET members benefit from discounts to all IET publications and free access to E&T Magazine. If you are an IET member, log in to your account and the discounts will automatically be applied.

Learn more about IET membership 

Recommend Title Publication to library

You must fill out fields marked with: *

Librarian details
Name:*
Email:*
Your details
Name:*
Email:*
Department:*
Why are you recommending this title?
Select reason:
 
 
 
 
 
Electronics Letters — Recommend this title to your library

Thank you

Your recommendation has been sent to your librarian.

© The Institution of Electrical Engineers
Published

A GaAs optical transmitter IC consisting of input buffers, a D-type flip-flop, an NRZ/RZ code convertor and a light source current driver has been developed for use in fibre-optic communication systems, employing D-MESFET SCFL by the Pt buried gate FET process. 1.1 Gbit/s modulation of an LD in RZ format with 20 mA peak drive current has been demonstrated.

Inspec keywords: gallium arsenide; field effect integrated circuits; III-V semiconductors; optical communication equipment; integrated optoelectronics

Other keywords: MESFET IC; D-MESFET SCFL; peak drive current; D-type flip-flop; GaAs; 1.1 Gbit/s; input buffers; 20 mA; fibre-optic communication systems; NRZ/RZ code convertor; optical transmitter IC; light source current driver

Subjects: Other field effect integrated circuits; Integrated optoelectronics; Optical communication

References

    1. 1)
      • Hasegawa, K., Tezuka, A., Uenoyama, T., Nishii, K., Bando, K., Utsumi, K., Onuma, T.: `High yield and low power multiplexer/demultiplexer by SCFL', GaAs IC symposium 1986 technical digest, 1986, p. 147–150.
    2. 2)
      • S. Katsu , S. Nambu , A. Shimano , G. Kano . A GaAs monolithic frequency divider using source coupled FET logic. IEEE Electron Device Lett. , 197 - 199
    3. 3)
      • K. Hasegawa , T. Uenoyama , K. Nishii , T. Onuma . Low dissipation current GaAs prescaler IC. Electron. Lett. , 251 - 252
    4. 4)
      • N. Ohta , T. Takada . High-speed GaAs SCFL monolithic integrated decision circuit for Gbit/s optical repeaters. Electron. Lett. , 983 - 985
    5. 5)
      • Utsumi, K., Isobe, M., Fujito, K., Ichida, T.: `714MBPS optical transmission system for high-definition TV', 29D3-15, IOOC '83 technical digest, 1983, p. 452–453.
    6. 6)
      • T. Onuma , A. Tamura , T. Uenoyama , H. Tsujii , K. Nishii , H. Yagita . High-transconductance enhancement-mode GaAs MESFET fabrication technology. IEEE Electron Device Lett. , 409 - 411
http://iet.metastore.ingenta.com/content/journals/10.1049/el_19870274
Loading

Related content

content/journals/10.1049/el_19870274
pub_keyword,iet_inspecKeyword,pub_concept
6
6
Loading