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InP/GaInAs heterojunction bipolar transistors with improved electrical characteristics grown on strained buffer layers

InP/GaInAs heterojunction bipolar transistors with improved electrical characteristics grown on strained buffer layers

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© The Institution of Electrical Engineers
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In the InP/GaInAs material system heterojunction bipolar transistors have been fabricated on isoelectronically doped InP buffer layers. The greatly improved performance of the B–E diodes, especially at low forward bias, is reflected in the improved behaviour of bipolar transistors.

Inspec keywords: III-V semiconductors; semiconductor technology; bipolar transistors; indium compounds; gallium arsenide

Other keywords: InP-GaInAs; isoelectronically doped InP buffer layers; heterojunction bipolar transistors; base emitter diode; semiconductors; low forward bias; strained buffer layers; behaviour of bipolar transistors; InP; performance

Subjects: II-VI and III-V semiconductors; Bipolar transistors

References

    1. 1)
      • R.N. Nottenburg , H. Temkin , M.B. Panish , R.A. Hamm . High gain InGaAs/InP heterostructure bipolar transistors grown by gas source molecular beam epitaxy. Appl. Phys. Lett. , 1112 - 1114
    2. 2)
      • P. Narozny , H. Beneking . High-quality GaAs Schottky diodes fabricated by strained layer epitaxy. Electron. Lett. , 1050 - 1051
    3. 3)
      • Emeis, N., Beneking, H.: `Bipolar devices fabricated on isoelectronically doped InP: improvement of device performances and uniformity', 1986 NATO-sponsored InP workshop, Sepember 1986, Harwichport, MA, USA, p. 22–25.
    4. 4)
      • H. Beneking , N. Emeis . Minority carrier lifetime improvement by single strained layer epitaxy of InP. IEEE Electron Device Lett. , 98 - 100
    5. 5)
      • R. Schummers , P. Narozny , H. Beneking . Strained-layer homojunction GaAs bipolar transistor with enhanced current gain. Electron. Lett. , 924 - 925
    6. 6)
      • N. Emeis , H. Beneking . Fabrication of widegap-emitter Schottky-collector transistor using GaInAs/InP. Electron. Lett.
    7. 7)
      • H. Beneking , P. Narozny , N. Emeis . High quality epitaxial GaAs and InP wafers by isoelectronic doping. Appl. Phys. Lett. , 828 - 830
    8. 8)
      • N. Emeis , H. Beneking . Fabrication of an NpM GaInAs/InP bipolar transistor by a two-step epitaxial process. Electron. Lett. , 590 - 591
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