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High-rate deposition of amorphous hydrogenated silicon: effect of plasma excitation frequency

High-rate deposition of amorphous hydrogenated silicon: effect of plasma excitation frequency

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© The Institution of Electrical Engineers
Published

The effect of plasma excitation frequency on the deposition of amorphous hydrogenated silicon in a silane glow-discharge system is investigated. A large increase in the deposition rate up to 21 Å/s is observed in the range between 25 and 150 MHz. Optical and electrical film parameters remain practically unchanged over this frequency range.

Inspec keywords: silicon; amorphous semiconductors; chemical vapour deposition; elemental semiconductors; semiconductor growth

Other keywords: electrical film parameters; high rate deposition; 25 to 150 MHz; PECVD; SinH2n+2 glow discharge; optical film parameters; effect of plasma excitation frequency; amorphous Si:H; deposition rate

Subjects: Elemental semiconductors; Semiconductor technology; Amorphous and glassy semiconductors; Chemical vapour deposition

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