Complementary silicon MESFET technology

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Complementary silicon MESFET technology

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© The Institution of Electrical Engineers
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Prototype complementary silicon MESFET inverters and rign oscillators were fabricated. N-channel transistors have platinum gates and erbium source and drain contacts, while for the p-channel devices the roles of the two metals are reversed. Silicon-on-sapphire substrates were used to provide good device isolation and realisation of normally-off operation.

Inspec keywords: integrated circuit technology; Schottky gate field effect transistors; silicon; field effect integrated circuits; elemental semiconductors

Other keywords: device isolation; SOS substrates; ring oscillators; Si-Al2O3; complementary type; MESFET technology; Pt gates; elemental semiconductors; drain contacts; inverters; monolithic IC; Er source contacts

Subjects: Other field effect integrated circuits

References

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      • Tove, P.A., Bohlin, K., Stolt, L., Norde, H.: 0075575, , European patent, US patent 4.554569.
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      • P.A. Tove . Vacuum. Vacuum
    3. 3)
      • Tove, P.A.: 8101994-5, , Swedish patent application.
    4. 4)
      • T.W. Houston . Radiation hardness of a silicon MESFET 4k × 1 s RAM. IEEE Trans. , 1483 - 1486
    5. 5)
      • K. Bohlin , H.T. Nilsson , P.A. Tove . A p-channel MESFET on silicon using an erbium gate. Solid-State Electron. , 913 - 915
    6. 6)
      • C.D. Hartgring . Silicon MESFET digital circuit techniques. IEEE J. Solid-State Circuits , 578 - 584
    7. 7)
      • H. Muta . Femto-joule logic circuit with enhancement-type Schottky barrier gate FET. IEEE Trans. , 1023 - 1027
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