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Negative differential resistance at room temperature from resonant tunnelling in GaInAs/InP double-barrier heterostructures

Negative differential resistance at room temperature from resonant tunnelling in GaInAs/InP double-barrier heterostructures

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We report the first observation of room-temperature negative differential resistance in the GaInAs/InP materials system. The double-barrier structure examined was grown by organometallic chemical vapour deposition.

References

    1. 1)
      • L.L. Chang , L. Esaki , R. Tsu . Resonant tunnelling in semiconductor double barriers. Appl. Phys. Lett. , 593 - 595
    2. 2)
      • Y. Guldner , J.P. Vieren , P. Voisin , M. Voos , M. Razeghi , M.A. Poisson . Two-dimensional electron gas in a In0.53Ga0.47As-InP heterojunction grown by metalorganic chemical vapor deposition. Appl. Phys. Lett. , 877 - 879
http://iet.metastore.ingenta.com/content/journals/10.1049/el_19870082
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