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Lateral protrusions of ohmic contacts to AlGaAs/GaAs MODFET material

Lateral protrusions of ohmic contacts to AlGaAs/GaAs MODFET material

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© The Institution of Electrical Engineers
Published

Cross-sectional transmission electron microscopy is used to determine the structure of Au-, Ge- and Ni-based ohmic contacts at the interface with AlGaAs/GaAs modulation-doped field-effect-transistor material. Significant lateral diffusion (̃0.12μm) is found to occur at the edge of the contact during alloying. The observed contact structure places a limit on minimum geometries and must be taken into account if accurate device modelling is to be carried out.

Inspec keywords: III-V semiconductors; transmission electron microscope examination of materials; high electron mobility transistors; aluminium compounds; gallium arsenide; ohmic contacts

Other keywords: device modelling; MODFET; contact structure; Ohmic contacts; AlGaAs-GaAs; transmission electron microscopy; lateral diffusion; modulation-doped field-effect-transistor

Subjects: Semiconductor-metal interfaces; II-VI and III-V semiconductors; Other field effect devices

References

    1. 1)
      • A. Christou , N. Papanicolaou . Redistribution of aluminum in MODFET ohmic contacts. Solid-State Electron. , 189 - 192
    2. 2)
      • T.K. Higman , M.A. Emanuel , J.J. Coleman , S.J. Jeng , C.M. Wayman . Structural analysis of Au-Ni-Ge and Au-Ag-Ge alloyed ohmic contacts on modulation-doped AlGaAs-GaAs heterostructures. J. Appl. Phys. , 677 - 680
    3. 3)
      • P. Zwicknagl , S.D. Mukherjee , P.M. Capani , H. Lee , H.T. Griem , L. Rathbun , J.D. Berry , W.L. Jones , L.F. Eastman . Very low resistance Au/Ge/Ni/Ag based ohmic contact formation to Al0.25/Ga0.75As/GaAs and Al0.48In0.52As/Ga0.47In0.53As heterostructures: a behavioral comparison. J. Vac. Sci. & Technol. , 476 - 484
    4. 4)
      • Z. Lilental-Weber , R. Gronsky , J. Washburn , N. Newman , W.E. Spicer , E.R. Weber . Schottky and ohmic Au contacts on GaAs: microscopic and electrical investigation. J. Vac. Sci. & Technol. , 912 - 918
    5. 5)
      • S.J. Lee , C.R. Crowell . Parasitic source and drain resistance in high-electron-mobility transistors. Solid-State Electron. , 659 - 668
    6. 6)
      • A.K. Rai , M.H. Rashid , P.P. Pronko , A. Ezis , D.W. Langer . Preparation of cross-sectional TEM samples with observable thin sections at desired regions of non-uniform surfaced semiconductor devices. J. Electron Microsc. Tech.
    7. 7)
      • A. Ketterson , F. Ponse , T. Henderson , J. Klem , H. Morkoc . Extremely low contact resistances for AlGaAs/GaAs modulation-doped field-effect transistor structures. J. Appl. Phys. , 2305 - 2307
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