Lateral protrusions of ohmic contacts to AlGaAs/GaAs MODFET material

Lateral protrusions of ohmic contacts to AlGaAs/GaAs MODFET material

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Cross-sectional transmission electron microscopy is used to determine the structure of Au-, Ge- and Ni-based ohmic contacts at the interface with AlGaAs/GaAs modulation-doped field-effect-transistor material. Significant lateral diffusion (̃0.12μm) is found to occur at the edge of the contact during alloying. The observed contact structure places a limit on minimum geometries and must be taken into account if accurate device modelling is to be carried out.


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