Tailoring the I/V characteristics of a superlattice tunnel diode
Tailoring the I/V characteristics of a superlattice tunnel diode
- Author(s): R.A. Davies ; M.J. Kelly ; T.M. Kerr
- DOI: 10.1049/el:19870065
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- Author(s): R.A. Davies 1 ; M.J. Kelly 1 ; T.M. Kerr 1
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View affiliations
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Affiliations:
1: Hirst Research Centre, GEC Research Ltd., Wembley, UK
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Affiliations:
1: Hirst Research Centre, GEC Research Ltd., Wembley, UK
- Source:
Volume 23, Issue 2,
16 January 1987,
p.
90 – 92
DOI: 10.1049/el:19870065 , Print ISSN 0013-5194, Online ISSN 1350-911X
We demonstrate the exploitation of the precise growth control afforded by molecular beam epitaxy (MBE) to realise the design of a superlattice tunnel diode with a large negative differential resistance (NDR) feature (peak-to-valley ratio of 2.5:1) at room temperature.
Inspec keywords: semiconductor growth; molecular beam epitaxial growth; tunnel diodes
Other keywords:
Subjects: Junction and barrier diodes; Epitaxial growth; Semiconductor technology
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