Aging characteristics of AlGaInP/GaInP visible-light lasers (λL = 678 nm)

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Aging characteristics of AlGaInP/GaInP visible-light lasers (λL = 678 nm)

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© The Institution of Electrical Engineers
Published

An aging test for AlGaInP/GaInP visible-light lasers (λL = 678 nm) with 3–5 mW lasing output power was carried out for over 2000 h at room temperature. Significant degradation has not been observed during this test. The results indicate that the AlGaInP laser diodes have a considerable lifetime, suitable for practical use.

Inspec keywords: III-V semiconductors; indium compounds; gallium compounds; life testing; ageing; aluminium compounds; semiconductor junction lasers

Other keywords: room temperature; 2000 h; 678 nm; lifetime; AlGaInP-GaInP lasers; semiconductors; DH lasers; 3 to 5 mW; visible-light lasers; aging test; AlGaInP laser diodes; output power

Subjects: Production facilities and engineering; Semiconductor lasers; Optoelectronics manufacturing; Manufacturing processes; Testing; II-VI and III-V semiconductors

References

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