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Very high-transconductance short-channel GaAs MESFETs with Ga0.3Al0.7As buffer layer

Very high-transconductance short-channel GaAs MESFETs with Ga0.3Al0.7As buffer layer

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© The Institution of Electrical Engineers
Published

MESFETs with 0.17μm gate length were manufactured with an n+GaAs active layer (3 × 1018cm-3) and an undoped Ga0.3Al0.7As buffer layer grown by molecular-beam epitaxy. The deives showed very high transconductance (700mS/mm) with good pinchoff characteristics. The experimental transconductance values were compared with calculated ones using a model that assumed total carrier confinement within the active layer by a barrier potential at the GaAs/GaAlAs interface. The results suggest that very high-transconductance short-gate-length MESFETs can be fabricated with a heavily doped GaAs active layer provided that the carrier density in the active layer is maintained at the doping level.

Inspec keywords: gallium arsenide; Schottky gate field effect transistors; aluminium compounds; III-V semiconductors; molecular beam epitaxial growth

Other keywords: very high transconductance; heavily doped active layer; III-V semiconductors; short-gate-length; total carrier confinement; 0.17 micron; undoped buffer layer; molecular-beam epitaxy; GaAs-Ga0.3Al0.7As; n+-type active layer; pinchoff characteristics; 700 mS/mm; barrier potential; MESFETs; MBE

Subjects: Epitaxial growth; Other field effect devices

References

    1. 1)
      • W. Kopp , H. Morkoc , T.J. Drummond , S.L. Su . Characteristics of submicron gate GaAs FETs with Al0.3Ga0.7As buffers: effects of interface quality. IEEE Electron Device Lett. , 46 - 48
    2. 2)
      • W.I. Wong , S. Judaprawira , C.E.C. Wood , L.F. Eastman . Molecular beam epitaxy GaAs-Ga1–xAlxAs heterostructures for metal semiconductor field effect transistor applications. Appl. Phys. Lett. , 708 - 710
    3. 3)
      • W. Patrick , W.S. MacKie , S.P. Beaumont , C.D.W. Wilkinson . Low temperature annealed contacts to very thin GaAs epilayers. Appl. Phys. Lett. , 986 - 988
    4. 4)
      • Patrick, W., MacKie, W.S., Beaumont, S.P., Wilkinson, C.D.W.: `Polyimide as a negative electron resist and its application in crossovers and metal on polymer mask fabrication', Proc. of 29th international symposium on electron, ion and photon beams, 1985, NY, p. 390–393, in, 1986, AVS.
    5. 5)
      • D. Arnold , R. Fischer , J. Klem , F. Ponse , H. Morkoc . Reduction of backgating in GaAs/AlGaAs MESFETs by optimisation of active-layer/buffer-layer interface. Electron. Lett. , 376 - 378
    6. 6)
      • H. Jaeckel , V. Graf , B.J. van Zeghbroeck , P. Vettiger . Scaled GaAs MESFETs with gate length down to 100 nm. IEEE Electron Device Lett. , 522 - 524
    7. 7)
      • J.R. Hauser . Characteristics of junction field effect devices with small channel length-to-width ratios. Solid-State Electron. , 577 - 587
    8. 8)
      • W. Patrick , W.S. MacKie , S.P. Beaumont , C.D.W. Wilkinson , C.H. Oxley . Very short gate-length GaAs MESFETs. IEEE Electron Device Lett. , 471 - 472
    9. 9)
      • K. Yamaguchi , H. Kodera . Drain conductance of junction gate FETs in the hot electron range. IEEE Trans. , 545 - 553
    10. 10)
      • Y.K. Feng . New v(E) relationship for GaAs. Electron. Lett. , 453 - 454
    11. 11)
      • C.L. Ghosh , R.L. Layman . GaAs MESFETs with Ga1–xAlxAs buffer layers. IEEE Electron Device Lett. , 3 - 5
    12. 12)
      • H. Daembkes , W. Brockerhoff , K. Heime . Improved short channel GaAs MESFETs by use of higher doping concentration. IEEE Trans. , 1032 - 1037
    13. 13)
      • Y. Awano , K. Tomizawa , N. Hashizume , M. Kawashima . Monte Carlo particle simulation of a GaAs short-channel MESFET. Electron. Lett. , 20 - 21
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