The substrate growth temperature dependence of electrical properties for a low-noise MESFET fabricated on MBE-grown material has been demonstrated. The optimum noise figure and its associated gain were attributed to the higher epilayer quality and mobility at a growth temperature of 650°C between temperatures of 550°C and 700°C.
Inspec keywords: solid-state microwave devices; semiconductor growth; Schottky gate field effect transistors; gallium arsenide; carrier mobility; molecular beam epitaxial growth; electron device noise; III-V semiconductors
Other keywords:
Subjects: Other field effect devices; Epitaxial growth; Solid-state microwave circuits and devices
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