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Activation energy of Cd in in1−xGaxAsyP1−y on InP (for y = 0 to 1)

Activation energy of Cd in in1−xGaxAsyP1−y on InP (for y = 0 to 1)

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© The Institution of Electrical Engineers
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The activation energy EA of the commonly used acceptor Cd in InGaAsP is studied experimentally for the whole range of compositions, lattice-matched to InP, with dependence on the doping concentration. Comparison with theory strongly suggests that EA is markedly influenced by the chemical shift.

Inspec keywords: gallium arsenide; cadmium; III-V semiconductors; semiconductor doping; gallium compounds; indium compounds; impurity electron states

Other keywords: activation energy; InP; chemical shift; doping concentration; III-V semiconductor; In1-xGaxAsyP1-y:Cd-InP; acceptor

Subjects: II-VI and III-V semiconductors; Semiconductor doping; Doping and implantation of impurities; Impurity and defect levels in tetrahedrally bonded nonmetals

References

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