The activation energy EA of the commonly used acceptor Cd in InGaAsP is studied experimentally for the whole range of compositions, lattice-matched to InP, with dependence on the doping concentration. Comparison with theory strongly suggests that EA is markedly influenced by the chemical shift.
Inspec keywords: gallium arsenide; cadmium; III-V semiconductors; semiconductor doping; gallium compounds; indium compounds; impurity electron states
Other keywords:
Subjects: II-VI and III-V semiconductors; Semiconductor doping; Doping and implantation of impurities; Impurity and defect levels in tetrahedrally bonded nonmetals
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