© The Institution of Electrical Engineers
A new structure for AlGaAs/GaAs heterojunction bipolar transistors (HBTs) that employs a buried proton-implanted external collector layer is proposed. This structure has been successfully used to achieve high-performance HBTs with maximum oscillation frequencies fmax up to 51 GHz for a device with 2 μ×5 μm emitter and 4 μm×7 μm collector dimensions.
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http://iet.metastore.ingenta.com/content/journals/10.1049/el_19860903
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