Improvement In AlGaAs/GaAs HBT power gains with buried proton-implanted layer

Improvement In AlGaAs/GaAs HBT power gains with buried proton-implanted layer

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A new structure for AlGaAs/GaAs heterojunction bipolar transistors (HBTs) that employs a buried proton-implanted external collector layer is proposed. This structure has been successfully used to achieve high-performance HBTs with maximum oscillation frequencies fmax up to 51 GHz for a device with 2 μ×5 μm emitter and 4 μm×7 μm collector dimensions.


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