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Improvement In AlGaAs/GaAs HBT power gains with buried proton-implanted layer

Improvement In AlGaAs/GaAs HBT power gains with buried proton-implanted layer

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A new structure for AlGaAs/GaAs heterojunction bipolar transistors (HBTs) that employs a buried proton-implanted external collector layer is proposed. This structure has been successfully used to achieve high-performance HBTs with maximum oscillation frequencies fmax up to 51 GHz for a device with 2 μ×5 μm emitter and 4 μm×7 μm collector dimensions.

References

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      • Asbeck, P.M., Miller, D.L., Anderson, R.J., Deming, R.N., Chen, T.T., Liechti, C.A., Eisen, F.H.: `Application of heterojunction bipolar transistors to high speed, small-scale digital integrated circuits', IEEE GaAs IC symposium, 1984, p. 133–136.
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      • Nagata, K., Nakajima, O., Yamauchi, Y., Ishibashi, T.: `A new self-aligned structure AlGaAs/GaAs HBT for high speed digital circuits', Inst. Phys. Conf. Ser. 79, 1985, p. 589–594.
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      • M.F. Chang , P.M. Asbeck , D.L. Miller , K.C. Wang . GaAs/(GaAl)As heterojunction bipolar transistors using a self-aligned substitutional emitter process. IEEE Electron Device Lett. , 8 - 10
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      • Morizuka, K., Asaka, H., Iizuka, N., Tsuda, K., Yoshda, J., Akagi, J., Kobayashi, T., Ashizawa, Y., Azuma, M.: `Self-aligned AlGaAs/GaAs HBTs and 35ps LCML ring oscillators fabricated by Mg and P double implantation', Ext. abstract of 16th conf. on solid state devices and materials, 1986, p. 359–362.
    5. 5)
      • O. Nakajima , K. Nagata , H. Ito , T. Ishibashi . Suppression of emitter size effect on current gain in AlGaAs/GaAs HBTs. Jpn. J. Appl. Phys. , 1368 - 1369
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