MOCVD growth of selectively doped AlInAs/GaInAs heterostructures and its application to HIFETs (heterointerface FETs)

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MOCVD growth of selectively doped AlInAs/GaInAs heterostructures and its application to HIFETs (heterointerface FETs)

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For the first time selectivly doped AlInAs/GaInAs heterostructures lattice-matched to InP were successfully grown by MOCVD. Mobility as high as 10500 cm2/Vs (ns=2.7×1012cm-2) was obtained at room temperature. We fabricated a HIFET (heterointerface FET) 1.5 μm in gate length using the heterostructure, and it showed a transconductance of 302 mS/mm.

Inspec keywords: aluminium compounds; semiconductor growth; III-V semiconductors; p-n heterojunctions; gallium arsenide; semiconductor epitaxial layers; vapour phase epitaxial growth; indium compounds; semiconductor doping; high electron mobility transistors

Other keywords: 1.5 μm gate length; VPE; MODFET; 302 mS/mm transconductance; selectively doped heterostructures; AlInAs/GaInAs; heterointerface FETs; AlInAs-GaInAs; high electron mobility transistors; HIFET; HEMT; MOCVD growth; III-V semiconductors

Subjects: Thin film growth, structure, and epitaxy; Semiconductor doping; Electrical properties of semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions; Other field effect devices; II-VI and III-V semiconductors; Epitaxial growth; Chemical vapour deposition; Semiconductor junctions

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      • T.P. Pearsall . Two-dimensional electronic systems for highspeed device applications. Surface Sci. , 529 - 544
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      • M. Razeghi , J.P. Duchemin , J.C. Portal , L. Dmowski , G. Remei , R.J. Nicholas , A. Briggs . First observation of the quantum Hall effect in a Ga0.47 In0.53As-InP heterostructure with three electric subbands. Appl. Phys. Lett. , 712 - 714
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      • K. Tanaka , H. Takakuwa , F. Nakamura , Y. Mori , Y. Kato . Low-noise microwave HIFET fabricated using photolithography and MOCVD. Electron. Lett. , 487 - 489
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