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For the first time selectivly doped AlInAs/GaInAs heterostructures lattice-matched to InP were successfully grown by MOCVD. Mobility as high as 10500 cm2/Vs (ns=2.7×1012cm-2) was obtained at room temperature. We fabricated a HIFET (heterointerface FET) 1.5 μm in gate length using the heterostructure, and it showed a transconductance of 302 mS/mm.
Inspec keywords: aluminium compounds; semiconductor growth; III-V semiconductors; p-n heterojunctions; gallium arsenide; semiconductor epitaxial layers; vapour phase epitaxial growth; indium compounds; semiconductor doping; high electron mobility transistors
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Subjects: Thin film growth, structure, and epitaxy; Semiconductor doping; Electrical properties of semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions; Other field effect devices; II-VI and III-V semiconductors; Epitaxial growth; Chemical vapour deposition; Semiconductor junctions