Mechanism of carrier lifetime increase in ion beam synthesised SOI structures

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Mechanism of carrier lifetime increase in ion beam synthesised SOI structures

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Carrier lifetimes were measured in epitaxial silicon layers which were deposited on silicon wafers implanted with different nitrogen doses at 330 keV. At doses greater than 1016 cm-2 the lifetime was more than one order of magnitude higher on the implanted part of the wafers (∼300μs). The mechanism responsible for this effect is connected with the gettering efficiency for heavy metals of a precipitation-rich dislocation network in the implanted silicon.

Inspec keywords: ion implantation; carrier lifetime; silicon; elemental semiconductors; semiconductor-insulator boundaries

Other keywords: precipitation-rich dislocation network; ion beam synthesis; gettering efficiency; semiconductor insulator structure; carrier lifetime increase; Si:N; Si:N wafers; Si-SiO2; SOI structures; 330 keV; epitaxial Si layers; Si-Si3N4; ion implantation

Subjects: Electrical properties of metal-insulator-semiconductor structures; Semiconductor doping; Metal-insulator-semiconductor structures; Charge carriers: generation, recombination, lifetime, and trapping (semiconductors/insulators); Elemental semiconductors; Ion beam effects

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