Local charge influence on impurity diffusion in semiconductors

Access Full Text

Local charge influence on impurity diffusion in semiconductors

For access to this article, please select a purchase option:

Buy article PDF
£12.50
(plus tax if applicable)
Add to cart
Buy Knowledge Pack
10 articles for £75.00
(plus taxes if applicable)
Add to cart

IET members benefit from discounts to all IET publications and free access to E&T Magazine. If you are an IET member, log in to your account and the discounts will automatically be applied.

Learn more about IET membership 

Recommend Title Publication to library

You must fill out fields marked with: *

Librarian details
Name:*
Email:*
Your details
Name:*
Email:*
Department:*
Why are you recommending this title?
Select reason:
 
 
 
 
 
Electronics Letters — Recommend this title to your library

Thank you

Your recommendation has been sent to your librarian.

© The Institution of Electrical Engineers
Published

The impurity diffusion in semiconductors has been simulated numerically by considering the local charge present in the semiconductor during the process. Numerical results demonstrate the validity limits of the diffusion model based on the well known charge neutrality approximation.

Inspec keywords: semiconductor doping; diffusion in solids

Other keywords: diffusion model; semiconductors; charge neutrality approximation; impurity diffusion; local charge

Subjects: Doping and implantation of impurities; Semiconductor doping

References

    1. 1)
      • S.M. Hu . Diffusion in heavily doped semiconductors: local charge neutrality and one-band approximations. J. Appl. Phys. , 2015 - 2018
    2. 2)
      • A.R. Mitchell , D.F. Griffith . (1980) , The finite difference method in partial differential equations.
    3. 3)
      • R. Shrivastava , A.H. Marshak . Charge neutrality and internal electric field produced by impurity diffusion. Solid-State Electron. , 73 - 74
    4. 4)
      • R.B. Fair , F.F.Y. Wang . (1981) Concentration profiles of diffused dopants in silicon, Impurity doping processes in silicon.
    5. 5)
      • A. Buonomo , C. Di Bello . Two-dimensional profiles of impurity diffusion in semiconductors. Electron. Lett. , 909 - 910
    6. 6)
      • S.M. Hu , S. Schmidt . Interations in sequential diffusion processes in semiconductors. J. Appl. Phys. , 4272 - 4283
    7. 7)
      • D.D. Warner , C.L. Wilson . Two-dimensional concentration dependent diffusion. Bell Syst. Tech. J. , 1 - 41
    8. 8)
      • A. Buonomo , C. Di Bello . Nonlinear two-dimensional impurity diffusion in semiconductors: a quasi-linear numerical analysis. IEEE Trans. , 1708 - 1713
    9. 9)
      • P.J. Anthony . Alteration of diffusion profiles in semiconductors due to p-n junctions. Solid-State Electron. , 1003 - 1009
    10. 10)
      • R.Q. Perrit , A.M. Marshak . A numerical study of field-aided diffusion. Solid-State Electron. , 257 - 265
    11. 11)
      • W. Jungling , P. Pichler , S. Selberherr , E. Guerrero , H.W. Pötzl . Simulation of critical IC fabrication processes using advanced physical and numerical methods. IEEE Trans. , 156 - 167
http://iet.metastore.ingenta.com/content/journals/10.1049/el_19860526
Loading

Related content

content/journals/10.1049/el_19860526
pub_keyword,iet_inspecKeyword,pub_concept
6
6
Loading