Radiation-hardened n-channel MOSFET achieved by a combination of polysilicon sidewall and SIMOX technology

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Radiation-hardened n-channel MOSFET achieved by a combination of polysilicon sidewall and SIMOX technology

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© The Institution of Electrical Engineers
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A radiation-hardened n-channel MOSFET has been developed by a combination of a polysilicon sidewall and SIMOX technology. The MOSFET is laterally isolated by multilayers of sidewall SiO2, sidewall polysilicon and field SiO2, It is vertically isolated by multilayers of highly oxygen-doped polysilicon and buried oxide. By using this isolation structure and a thin gate oxide, an increase in leakage currents and a threshold voltage shift were suppressed to less than 1.5 orders of magnitude and 0.08 V, respectively, after 106 rad(Si) irradiation.

Inspec keywords: semiconductor technology; insulated gate field effect transistors; radiation hardening (electronics)

Other keywords: poly-Si sidewall technology; sidewall SiO2; O implantation; n-channel MOSFET; thin gate oxide; buried oxide; SIMOX technology; field SiO2; radiation hardening; multilayer isolation

Subjects: Insulated gate field effect transistors

References

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      • G.W. Hughes , R.J. Powell . MOS hardness characterization and its dependence upon some process and measurement variables. IEEE Trans. , 1569 - 1572
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      • K. Izumi , M. Doken , H. Ariyoshi . CMOS devices fabricated on buried SiO2 layers formed by oxygen implantation into silicon. Electron. Lett. , 593 - 594
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      • G.E. Davis , H.L. Hughes . Total dose radiation-bias effects in laser-recrystallized SOI MOSFET's. IEEE Trans. , 1685 - 1689
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      • S. Nakashima , M. Akiya , K. Kato . Electric-field-shielding layers formed by oxygen implantation into silicon. Electron. Lett. , 568 - 570
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      • K. Izumi , Y. Omura , T. Sakai . SIMOX technology and its application to CMOS LSIs. J. Electron. Mater. , 845 - 861
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