First successful fabrication of high-performance all-refractory-metal (Ta-Au) GaAs FET using very highly doped N+-layers and nonalloyed ohmic contacts

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First successful fabrication of high-performance all-refractory-metal (Ta-Au) GaAs FET using very highly doped N+-layers and nonalloyed ohmic contacts

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© The Institution of Electrical Engineers
Published

An all-refractory-metal GaAs MESFET (ARFET) making use of a Ta Schottky barrier with a thick gold overlayer for the source, gate and drain, and very highly doped N+-layers (2x1019 cm-3) to achieve low-resistivity nonalloyed ohmic contacts, has been successfully fabricated. These have a 400 μm gate periphery and 0.6 μm gate length and measured an associated gain of 10.22 dB and a noise figure of 2.14 dB at 8 GHz. The ARFETs were fabricated on epitaxial layers grown by MBE. Only one mask was used to simultaneously define source, gate and drain regions via a plasma dry-etch technique.

Inspec keywords: field effect transistors; heavily doped semiconductors; III-V semiconductors; ohmic contacts

Other keywords: plasma dry-etch; ARFET; gate length; nonalloyed ohmic contacts; noise figure; gate periphery; gain; GaAs FET; very highly doped N+-layers; all-refractory-metal; Ta Schottky barrier; MBE; Ta-Au

Subjects: Other field effect devices; II-VI and III-V semiconductors

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