http://iet.metastore.ingenta.com
1887

Closed-tube diffusion of silicon in GaAs from sputtered silicon film

Closed-tube diffusion of silicon in GaAs from sputtered silicon film

For access to this article, please select a purchase option:

Buy article PDF
$19.95
(plus tax if applicable)
Buy Knowledge Pack
10 articles for $120.00
(plus taxes if applicable)

IET members benefit from discounts to all IET publications and free access to E&T Magazine. If you are an IET member, log in to your account and the discounts will automatically be applied.

Learn more about IET membership 

Recommend Title Publication to library

You must fill out fields marked with: *

Librarian details
Name:*
Email:*
Your details
Name:*
Email:*
Department:*
Why are you recommending this title?
Select reason:
 
 
 
 
 
Electronics Letters — Recommend this title to your library

Thank you

Your recommendation has been sent to your librarian.

Silicon diffusion into GaAs from a sputtered film in a closed ampoule is described. Excess arsenic pressure is required in the ampoule for a successful diffusion. The relationship between junction depth and the diffusion coefficient has been theoretically derived and the activation energy of the Si-Si pair diffusion coefficient has been obtained from that relation.

References

    1. 1)
      • T. Fkuzawa , S. Semura , H. Saito , T. Ohta , Y. Uchida , H. Nakashima . GaAlAs buried multiquantum well lasers fabricated by diffusion-induced disordering. Appl. Phys. Lett. , 1 - 3
    2. 2)
      • S. Semura , T. Ohta , T. Kuroda , H. Nakashima . AlGaAs/GaAs multiquantum well lasers with multiquantum well optical guide. Jpn J. Appl. Phys. , L548 - L550
    3. 3)
      • R.L. Thornton , R.D. Burnham , T.L. Paoli , N. Holonyak , D.G. Deppe . Low threshold planar buried heterostructure lasers fabricated by impurity-induced disordering. Appl. Phys. Lett. , 1239 - 1241
    4. 4)
      • D.G. Deppe , K.C. Hsieh , R.D. Burnham , R.L. Thornton . Low-threshold disorder-defined buried-heterostructure AlxGa1-x-GaAs quantum well lasers. Appl. Phys. Lett. , 4515 - 4520
    5. 5)
      • E. Omura , G.A. Vawter , L. Coldren , J.L. Merz . Selective Zn diffusion in n-GaAs with a sputtered Si Mark at 650°C. Electron. Lett. , 23 - 24
    6. 6)
      • A.K. Chin , I. Camlibel , L. Marchut , S. Singh , L.G. van Uitert , G.J. Zydzik . Evaluation of silicon films as a diffusion mask and encapsulant for InP and GaAs. J. Appl. Phys. , 3630 - 3633
    7. 7)
      • M.E. Greiner , J.F. Gibbons . Diffusion of silison in gallium arsenide using raid thermal processing: experiment and model. Appl. Phys. Lett. , 750 - 752
    8. 8)
      • K.L. Kavanagh , J.W. Mayer , C.W. Magee , J. Sheets , J. Tong , J.M. Woodall . Silicon diffusion at polycrystalline-Si/GaAs interfaces. Appl. Phys. Lett. , 1208 - 1210
    9. 9)
      • J. Crank . (1956) , The mathematics of diffusion.
http://iet.metastore.ingenta.com/content/journals/10.1049/el_19860337
Loading

Related content

content/journals/10.1049/el_19860337
pub_keyword,iet_inspecKeyword,pub_concept
6
6
Loading
This is a required field
Please enter a valid email address