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As- and Ga-implanted silicon camel diodes

As- and Ga-implanted silicon camel diodes

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The fabrication of Si-camel diodes using low-energy implantation of As and Ga into preamorphised substrates is described. By changing the Ga ion energy between 24 and 33 keV, it was possible to vary the barrier height of the diodes in the range 0.33 eV to 0.63 eV.

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      • J.M. Shannon , B.J. Goldsmith . Bulk unipolar Camel diodes formed using indium implantation into silicon. IEEE Electron Dev. Lett. , 583 - 585
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