Formation of multilayer Si3N4 structures by nitrogen ion implantation

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Formation of multilayer Si3N4 structures by nitrogen ion implantation

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Buried double-layered nitride structures in single-crystal (100) silicon have been produced by the implantation of doses of 0.75 × 1018 N+ cm-2 at 350 keV and 200 keV, respectively. Observations by RBS and channelling on the structure before and after high-temperature annealing and by TEM after annealing have shown two distinct buried nitride layers of different thicknesses. The mechanisms responsible for the formation of such a structure are discussed, together with possible routes for nitrogen migration. The processing conditions to form multilayer structures which are suitable for device applications are proposed.

Inspec keywords: silicon compounds; ion implantation; semiconductor technology

Other keywords: channelling; nitrogen ion implantation; N ion implantation; processing conditions; TEM; buried double layered nitride structures; buried nitride layers; doses; multilayer Si3N4 structures; device applications; RBS; high-temperature annealing; formation

Subjects: Semiconductor doping

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