Ion implantation of Si in semi-insulating In0.53Ga0.47As:Fe

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Ion implantation of Si in semi-insulating In0.53Ga0.47As:Fe

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© The Institution of Electrical Engineers
Published

Ion implantation of Si in semi-insulating In0.53Ga0.47As:Fe was discussed. Electrical activation of more than 100%, a broad implant profile and an average electron mobility of 3000 cm2/Vs are observed in layers implanted with a dose of 2 × 1013 cm−2 at 260 keV and annealed at 670°C for 15 min. The results of photoluminescence measurements are also presented.

Inspec keywords: gallium arsenide; doping profiles; III-V semiconductors; ion implantation; luminescence of inorganic solids; photoluminescence; carrier mobility; semiconductor doping; indium compounds; iron; silicon; semiconductor epitaxial layers

Other keywords: semiconductor material; In0.53Ga0.47As:Fe; electron mobility; photoluminescence measurements; Si; ion implantation; semiconductor epitaxial layers

Subjects: II-VI and III-V semiconductors; Epitaxial growth; Impurity concentration, distribution, and gradients; Doping and implantation of impurities; Electrical conductivity of II-VI and III-V semiconductors; Low-field transport and mobility; piezoresistance (semiconductors/insulators); Photoluminescence in tetrahedrally bonded nonmetals; Electronic properties of semiconductor thin films; Semiconductor doping

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