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Annealing effect in Si-doped GaAs and AlGaAs layers grown by MBE

Annealing effect in Si-doped GaAs and AlGaAs layers grown by MBE

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© The Institution of Electrical Engineers
Published

The effect of annealing on Si-doped GaAs and Al0·3Ga0·7As layers grown by MBE has been studied. In the heavily doped samples, the donor concentration decreased considerably and the broad luminescence characteristic of the SA centre reported in bulk n-GaAs appeared. The results suggest evidence that annealing converts some of the Si donors into complexes like the SA centre, which does not act as a donor.

Inspec keywords: III-V semiconductors; impurity electron states; semiconductor doping; heavily doped semiconductors; photoluminescence; molecular beam epitaxial growth; annealing; silicon; gallium arsenide; aluminium compounds; luminescence of inorganic solids; semiconductor epitaxial layers

Other keywords: photoluminescence; MBE; III-V semiconductors; SA centre; impurity electron states; donor concentration; annealing; broad luminescence characteristic; heavily doped samples; GaAs:Si; molecular beam epitaxy; Al0.3Ga0.7As:Si; Si dopant; AlGaAs layers; carrier density

Subjects: Electronic properties of semiconductor thin films; Optical properties of nonmetallic thin films; Doping and implantation of impurities; Impurity and defect levels in other nonmetals; Other heat and thermomechanical treatments; Epitaxial growth; II-VI and III-V semiconductors; Optical properties (related to treatment conditions); Vacuum deposition; Thin film growth, structure, and epitaxy; Electrical and magnetic properties (related to treatment conditions); Photoluminescence in tetrahedrally bonded nonmetals; Semiconductor doping

References

    1. 1)
      • C.J. Hwang . Effect of heat treatment on photoluminescence of Te doped GaAs. J. Appl. Phys. , 1983 - 1984
    2. 2)
      • S. Tatsuta , T. Intat , S. Okamura , S. Hiyamizu . The effect of tungsten-halogen lamp annealing on a selectively doped GaAs/N-AlGaAs heterostructure grown by MBE. Jpn. J. Appl. Phys. , L147 - L149
    3. 3)
      • C.J. Hwang . Optical properties of n-type GaAs. II: formation of efficient hole traps during annealing in Te-doped GaAs. J. Appl. Phys. , 4584 - 4590
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