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Zinc has been selectively diffused into n-GaAs substrates with a mask of Si deposited by magnetron sputtering at room temperature. No lateral enhanced diffusion along the substrate/mask interface is observed. At the diffusion temperature of 650°C studied here, no appreciable Si diffusion into the substrate is observed.
References
-
-
1)
-
N. Susa ,
H. Kanbe ,
H. Ando ,
Y. Ohmachi
.
Plasma enhanced CVD Si3N4 film applied to InP avalanche photodiodes.
Jpn. J. Appl. Phys.
,
L675 -
L678
-
2)
-
Y. Yamamoto ,
H. Kanbe
.
Zn diffusion in InxGa1−xAs with ZnAs2 source.
Jpn. J. Appl. Phys.
,
121 -
128
-
3)
-
Y.-R. Yuan ,
K. Eda ,
G.A. Vawter ,
J.L. Merz
.
Open tube diffusion of Zn into AlGaAs and GaAs.
J. Appl. Phys.
,
6044 -
6046
-
4)
-
D.P. Kennedy ,
R.R. O'Brien
.
Analysis of the impurity atom distribution near the diffusion mask for a planar p-n junction.
IBM J. Res. & Dev.
,
179 -
186
-
5)
-
C. Blaauw ,
A.J. Springthorpe ,
S. Dzioba ,
B. Emmerstorfer
.
CVD—SiO2 and plasma-SiNx films as Zn diffusion masks.
J. Electron. Mater.
,
251 -
262
-
6)
-
M.E. Greiner ,
F. Gibbons
.
Diffusion of silicon in gallium arsenide using rapid thermal processing: experiment and model.
Appl. Phys. Lett.
,
750 -
752
-
7)
-
K. Meehan ,
N. Holonyak ,
J.M. Brown ,
M.A. Nixon ,
P. Gavrilovic ,
R.D. Burnham
.
Disorder of an AlxGa1−xAs—GaAs superlattice by donor diffusion.
Appl. Phys. Lett.
,
549 -
551
-
8)
-
C.P. Lee ,
A. Margalit ,
A. Yariv
.
Dependence of Zn diffusion on the Al content in Ga1−xAlxAs.
Solid-State Electron.
,
905 -
907
-
9)
-
E.A. Rezek ,
P.D. Wright ,
N. Holonyak
.
Planar Zn diffusion in InP.
Solid-State Electron.
,
325 -
329
-
10)
-
B.J. Baliga ,
W. Davern
.
Lateral diffusion of zinc and tin in gallium arsenide.
IEEE Trans.
,
410 -
415
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