Temperature measurement technique using Pt diffusion into Au for ion-implanting wafers mounted on a spinning disc

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Temperature measurement technique using Pt diffusion into Au for ion-implanting wafers mounted on a spinning disc

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© The Institution of Electrical Engineers
Published

A new technique using Au-on-Pt films to measure spinning wafer temperature during ion implantation has been developed. The technique utilises the phenomenon of Pt diffusion into Au in an Au/Pt system at high temperatures. Wafer temperature is calculated from the resistivity change of the Au film due to Pt diffusion. This technique was successfully applied to measure the temperature of wafers mounted on a spinning disc in oxygen-ion implantation.

Inspec keywords: ion implantation; temperature measurement; diffusion in solids; semiconductor technology

Other keywords: ion implantation; Pt diffusion; resistivity change; spinning-wafer temperature; Au/Pt system; wafer temperature measurement

Subjects: Semiconductor doping; Thermal variables measurement

References

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