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Required grading length to eliminate the heterojunction spike in npn In0.52Al0.48As/In0.53Ga0.47As/InP bipolar transistors

Required grading length to eliminate the heterojunction spike in npn In0.52Al0.48As/In0.53Ga0.47As/InP bipolar transistors

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Energy-band diagrams have been studied for n-In0.52Al0.48As/p-In0.53Ga0.47As heterojunctions employing different compositional gradings for heterojunction bipolar transistor applications, and the minimum grading widths were calculated for eliminating the conduction-band spike barrier.

References

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