Double-heterostructure lasers based on the GaInAsSb/AlGaAsSb system have been prepared by liquid-phase epitaxy and operated in the 2.2 μm-wavelength region. Room-temperature, pulsed threshold current densities of 6 kA/cm2 and characteristic temperatures of T 0= 85 K have been obtained.
Inspec keywords: gallium arsenide; III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; semiconductor junction lasers; indium antimonide
Other keywords:
Subjects: Lasing action in semiconductors; Semiconductor lasers; Design of specific laser systems
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