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The oxygen content of silicon-on-insulator films, formed by oxygen implantation, is shown to be responsible for the generation of high-density free carriers: thermal donors at 450°C and new donors at 750°C. The variation of sheet resistance and spreading resistance profiles is measured after successive isochronal and isothermal anneals. The initial generation rate of new donors greatly exceeds that of thermal donors, suggesting a surface-states-related mechanism.
Inspec keywords: electrical conductivity measurement; semiconductor-insulator boundaries; ion implantation; carrier mobility
Other keywords:
Subjects: Impedance and admittance measurement; Metal-insulator-semiconductor structures; Semiconductor doping