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Thermal donor and new donor generation in SOI material formed by oxygen implantation

Thermal donor and new donor generation in SOI material formed by oxygen implantation

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The oxygen content of silicon-on-insulator films, formed by oxygen implantation, is shown to be responsible for the generation of high-density free carriers: thermal donors at 450°C and new donors at 750°C. The variation of sheet resistance and spreading resistance profiles is measured after successive isochronal and isothermal anneals. The initial generation rate of new donors greatly exceeds that of thermal donors, suggesting a surface-states-related mechanism.

References

    1. 1)
      • A. Bourret . (1984) Defects in semiconductors, Oxygen aggregation in silicon, in Kimberling and Parsey.
    2. 2)
      • Cristoloveanu, S., Pumfrey, J., Arrowsmith, R.P., Brini, J., Hemment, P.L.F.: `Properties of front and buried interfaces of oxygen implanted SOI films deduced from MOS device characteristics', Proceedings of INFOS conference, 1985, , (in press).
    3. 3)
      • S. Cristoloveanu , J. Wyncoll , P. Spinelli , P.L.F. Hemment , R.P. Arrowsmith . Temperature dependence and non-uniformity of electrical properties of SOI films obtained by oxygen implantation. Physica , 249 - 254
    4. 4)
      • P.L.F. Hemment , E. Maydel-Ondruesz , K.G. Stevens , J.A. Kilner , J. Butcher . Oxygen distributions in synthesized SiO2 layers formed by high dose O+ implantation into Si. Vacuum , 203 - 208
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