Influence of doping on threshold current of semiconductor lasers

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Influence of doping on threshold current of semiconductor lasers

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Doping of the active layer of a semiconductor laser reduces the threshold carrier density, the more so the higher the doping level. As a consequence, the threshold current goes through a minimum dependent on doping. This minimum arises for doping densities of the order of 1018 cm−3, and lies about 25% below the value without doping for an n-doped InGaAsP laser. As the temperature dependence of the threshold current is simultaneously weaker (T0≃85°), appropriate n-doping may improve the efficiency of a semiconductor laser. Additionally, it is shown that n-doping is more favourable than p-doping.

Inspec keywords: indium compounds; III-V semiconductors; gallium arsenide; carrier density; semiconductor doping; semiconductor junction lasers

Other keywords: threshold carrier density; doping densities; III-V semiconductors; threshold current; active layer; semiconductor lasers; doping; InGaAsP laser

Subjects: II-VI and III-V semiconductors; Semiconductor doping; Doping and implantation of impurities; Lasing action in semiconductors; Semiconductor lasers

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