Gigahertz band GaAs monolithic limiting amplifier

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Gigahertz band GaAs monolithic limiting amplifier

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© The Institution of Electrical Engineers
Published

The letter presents the design and performance of a gigahertz band limiting amplifier IC using GaAs MESFET IC technology. With a two-chip connection, an AM/PM conversion of 0.7°/dB over 43 dB input dynamic range at 1 GHz has been achieved.

Inspec keywords: field effect integrated circuits; III-V semiconductors; microwave integrated circuits; microwave amplifiers

Other keywords: GaAs MESFET IC technology; GaAs monolithic limiting amplifier; gigahertz band; AM/PM conversion; III-V semiconductors; amplifier IC; dynamic range; two-chip connection

Subjects: Solid-state microwave circuits and devices; Amplifiers

References

    1. 1)
      • K. Yamasaki , N. Kato , M. Hirayama . Below 10 ps/gate operation with buried p-layer SAINT FETs. Electron. Lett. , 1029 - 1031
    2. 2)
      • S. Fukuda , Y. Fujiki , Y. Ara , I. Haga . A new microwave limiter using GaAs field effect transistors. NEC Res. & Dev.
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