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Low-threshold MBE GaAs/AlGaAs quantum well lasers with dry-etched mirrors

Low-threshold MBE GaAs/AlGaAs quantum well lasers with dry-etched mirrors

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© The Institution of Electrical Engineers
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An index-guided GaAs/AlGaAs multiquantum well laser with etched mirrors has been fabricated by molecular beam epitaxy and a dry etching process. The transverse mode is stabilised by a built-in optical waveguide, which is formed on the substrates with a pair of grooves. The etched mirrors are fabricated by reactive ion beam etching. The lasers with 200 μm-long cavities exhibit threshold currents as low as 30 mA and external differential quantum efficiencies as high as 41%.

Inspec keywords: semiconductor growth; optical waveguides; III-V semiconductors; gallium arsenide; aluminium compounds; molecular beam epitaxial growth; sputter etching; integrated optics; semiconductor junction lasers

Other keywords: lateral waveguide structure; semiconductor lasers; III-V semiconductors; GaAs/AlGaAs; MBE; dry-etched mirrors; low threshold type; integrated optics; multiquantum well laser; reactive ion beam etching; molecular beam epitaxy; RIE; transverse mode

Subjects: Design of specific laser systems; Optical waveguides and couplers; Semiconductor lasers; Integrated optics; Lasing action in semiconductors; Epitaxial growth; Integrated optics; Vacuum deposition

References

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      • Bouadma, N., Brillouet, F., Riou, J., Dugrand, L.: `Low threshold GaAs/AlGaAs buried-heterostructure lasers with ion beam etched mirrors', Proc. of 9th IEEE international semiconductor laser conference, 1985, Rio de Janeiro, p. 180–181.
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