1 GHz 5 mA 128/129 GaAs prescaler IC

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1 GHz 5 mA 128/129 GaAs prescaler IC

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A 1 GHz dual modulus 128/129 prescaler with only a 5 mA dissipation current is developed. A 5-level series gating source-coupled FET logic is used to attain this small current. The IC is fabricated with 0.5 μm-gate-length GaAs MESFETs. This prescaler is suitable for a synthesiser in a mobile communication system.

Inspec keywords: gallium arsenide; III-V semiconductors; scaling circuits; mobile radio systems; digital integrated circuits

Other keywords: synthesizer; source-coupled FET logic; dual modulus 128/129 prescaler; GaAs prescaler IC; dissipation current 5 mA; 1 GHz; mobile communication system; GaAs MESFETs

Subjects: Mobile radio systems; Other digital circuits

References

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      • K. Yamasaki , N. Kato , M. Hirayama . Below 10 ps/gate operation with buried p-layer SAINT FETs. Electron. Lett. , 1029 - 1031
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      • Shimizu, S., Kamatani, Y., Toyoda, N., Kanazawa, K.: `A 1 GHz 50 mW GaAs dual modulus divider IC using source-coupled FET logic', ISSCC '84 technical paper, 1984, p. 52–53.
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      • Y. Akazawa , H. Kikuchi , K. Sano . Frequencey synthesizer LSI for new mobile radio unit. Rev. Electr. Commun. Lab.
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      • S. Miyazawa , Y. Ishii , S. Ishida , Y. Nanishi . Direct observation of dislocation effect on threshold voltage of a GaAs field effect transistor. Appl. Phys. Lett. , 853 - 855
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      • Takada, T., Idda, M., Sudo, T.: `High-speed GaAs MESFET logic (source coupled FET logic)', National convetion record on semiconductors and materials of IECE Japan, 1981, 122, p. 123.
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      • Nakanishi, H., Kohda, H., Yamada, K., Hoshikawa, K.: `Nearly-dislocation-free semi-insulating GaAs grown in B', Extended abstracts of 16th international conference on solid state devices and materials, 1984, Kobe, Japan, p. 63.
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