Se+ ion implantation into encapsulated GaAs

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Se+ ion implantation into encapsulated GaAs

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© The Institution of Electrical Engineers
Published

PECVD Si3N4 was deposited on undoped SI (100) GaAs. Se+ ions were implanted with a dose of 1×1014 ions cm−2 at an ion energy of 400 keV through the Si3N4 layer. Annealing was carried out on a dual graphite strip heater at temperatures up to 900°C for 100 s. Transmission electron microscope studies show a large concentration of damage in the form of dense dislocation tangles and long-range strain centres at the Si3N4/GaAs interface. Below this sheet of gross damage the material contains a relatively low density of dislocation loops. Electrical measurements indicate that, for a similar implant condition directly into GaAs, a relatively high electrical activity is measured compared with that of the implants through the Si3N4 encapsulating layer.

Inspec keywords: gallium arsenide; III-V semiconductors; transmission electron microscope examination of materials; ion implantation; encapsulation; dislocation loops; selenium

Other keywords: ion implantation; Si3N4 encapsulating layer; dual graphite strip heater; long range strain centres; III-V semiconductor; TEM; high electrical activity; annealing; dislocation tangles; dislocation loops; encapsulated GaAs; damage; GaAs:Se+

Subjects: Doping and implantation of impurities; Etch pits, decoration, transmission electron-microscopy and other direct observations of dislocations; Ion beam effects; II-VI and III-V semiconductors; Semiconductor doping

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