Monitoring the final on-zone dynamics in TIL GTO thyristors

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Monitoring the final on-zone dynamics in TIL GTO thyristors

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© The Institution of Electrical Engineers
Published

An original method that spotlights the increase of the final on-zone of the squeezed plasma with the level of anode current is described and implemented in the gated turn-off experimental investigation of TO-220-packaged, high-voltage TIL GTO thyristors.

Inspec keywords: semiconductor device models; thyristors

Other keywords: squeezed plasma; final on-zone dynamics; TIL GTO thyristors; TO-220-packaged; high-voltage TIL GTO thyristors; two interdigitation level

Subjects: Semiconductor device modelling, equivalent circuits, design and testing; Thyristors and silicon controlled rectifiers

References

    1. 1)
      • A. Silard , Ş Rusu , F. ŢurŢudǍu . Current balancing in TIL GTO thyristors. IEEE Electron Device Lett. , 350 - 352
    2. 2)
      • A. Silard , Ş Rusu , F. ŢurŢudǍu , B. Kosa . A double interdigitated GTO switch. IEEE Trans. , 322 - 329
    3. 3)
      • A. Silard , Ş. Rusu . The TIL GTO thyristor—A power switch with unique turn-off features. IEEE Electron Device Lett. , 347 - 349
    4. 4)
      • A. Silard . Achieving the limits of IATO in TIL GTO thyristors. IEEE Electron Device Lett. , 376 - 378
    5. 5)
      • A. Silard . Switching characteristics of 45 A double-interdigitated GTO thyristors. IEEE Trans. , 1230 - 1237
    6. 6)
      • A. Silard . Electrothermal failure-safety of TIL GTO thyristors. IEEE Electron Device Lett. , 338 - 341
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