Two-dimensional impurity profiling near the mask edge using anodisation

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Two-dimensional impurity profiling near the mask edge using anodisation

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An experimental scheme for measuring the two-dimensional impurity profile near the mask edge is described, based on forming a U-groove in silicon by anisotropic etching leaving only the sidewall resistors. 2-D impurity profiling of the sidewall resistor is achieved by constant-voltage anodisation and etching the resultant oxide. An n × m resistor array structure for simultaneously obtaining the 2-D impurity profile is also described.

Inspec keywords: insulated gate field effect transistors; semiconductor technology; doping profiles

Other keywords: anodisation; side-wall resistor; sidewall resistors; constant-voltage anodisation; doping profiling; anisotropic etching; experimental scheme; submicron MOSFETs; mask edge; oxide etching; n× m resistor array structure; 2-D impurity profiling; U-groove in Sc

Subjects: Insulated gate field effect transistors; Lithography (semiconductor technology); Semiconductor doping

References

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      • K.A. Salsburg , H.H. Hansen . FEDSS: Finite-element diffusion-simulation system. IEEE Trans. , 1004 - 1011
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      • B.R. Penumalli . Comprehensive two-dimensional VLSI process simulation program, BICEPS. IEEE Trans. , 986 - 992
    3. 3)
      • Hill, C., Butler, A.L.: `Solid state devices', Inst. of Phys. Conf. Series, 1984, 69, Inst. of Phys., , p. 161–180.
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