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Electric-field-induced refractive index variation in quantum-well structure

Electric-field-induced refractive index variation in quantum-well structure

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© The Institution of Electrical Engineers
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The refractive index variation in a quantum-well structure by an electric field is given theoretically. The calculated variation is −1% for an applied field of 3.1×105 V/cm in a 300 Å-thick GaInAsP/InP single quantum well, which is about 39 times larger than the bulk value. A semiconductor quantum-well structure is found theoretically to be a new material with a larger electro-optic coefficient. Application to a new optical switching device is also suggested.

Inspec keywords: indium compounds; refractive index; gallium arsenide; semiconductor superlattices; electro-optical effects; III-V semiconductors

Other keywords: electro-optic coefficient; semiconductor superlattices; GaInAsP/InP; refractive index variation; III-V semiconductors; electric field; quantum-well structure; optical switching device

Subjects: II-VI and III-V semiconductors; Electro-optical effects (condensed matter); Electro-optical devices; Semiconductor junctions; Electrical properties of semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

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