© The Institution of Electrical Engineers
The letter describes a simple method for calculating the maximum bulk electric field in high-voltage semiconductor diodes with large bevel angles. It is based on the notion of a characteristic length, which is defined in the letter. The resulting model is a useful design aid.
References
-
-
1)
-
V.A.K. Temple ,
M.S. Adler
.
The theory and application of a simple etch contour for near ideal breakdown voltage in plane and planar p-n junctions.
IEEE Trans.
,
950 -
955
-
2)
-
D. Halliday ,
R. Resnick
.
(1970)
Fundamentals of physics.
-
3)
-
H. Lawrence ,
R.M. Warner
.
Diffused junction depletion layer calculations.
Bell Syst. Tech. J.
,
389 -
404
-
4)
-
M. Kurata
.
(1982)
, Numerical analysis for semiconductor devices.
-
5)
-
V.A.K. Temple ,
M.S. Adler
.
A general method for predicting the avalanche breakdown voltage of negative bevelled devices.
IEEE Trans.
,
956 -
960
-
6)
-
V.A.K. Temple ,
M.S. Adler
.
Maximum surface and bulk electric fields at breakdown for planar and bevelled devices.
IEEE Trans.
,
1266 -
1270
-
7)
-
D.J. Hamilton ,
N.G. Howard
.
(1975)
Basic integrated circuit engineering.
http://iet.metastore.ingenta.com/content/journals/10.1049/el_19850407
Related content
content/journals/10.1049/el_19850407
pub_keyword,iet_inspecKeyword,pub_concept
6
6