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Nonequilibrium devices for infra-red detection

Nonequilibrium devices for infra-red detection

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To increase the operating temperature of long-wavelength infra-red detectors it is proposed that narrow-gap semiconductor devices be operated in a nonequilibrium mode such that the carrier densities are held below their equilibrium, near-intrinsic, levels. The possible use of exclusion in photo-conductors and extraction in photodiodes is discussed, and experimental results are shown for the former.


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