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Selectively implanted oxygen isolation technology (SIO)

Selectively implanted oxygen isolation technology (SIO)

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© The Institution of Electrical Engineers
Published

A new isolation technology using selectively implanted oxygen into silicon is presented. The technique offers a five-fold reduction in the bird's beak as compared to the standard LOCOS process. Good interface characteristics are observed for the implanted oxide as well as for the active oxide grown between the implanted oxide regions. Electrical characteristics of n+/p diodes isolated by the implanted oxide are found to be comparable to that of LOCOS diodes.

Inspec keywords: VLSI; integrated circuit technology

Other keywords: selectively implanted oxygen; implanted oxide; bird's beak; interface characteristics; isolation technology; active oxide; n+/p diodes

Subjects: Semiconductor technology; Semiconductor integrated circuits

References

    1. 1)
      • J.C. Hui , T.Y. Chiu , S.W.S. Wong , W.G. Oldham . Sealed-interface local oxidation technology. IEEE Trans. , 554 - 561
    2. 2)
      • Kurosawa, K., Soibata, T., Iizuka, H.: `A new bird's beak free field isolation technology for VLSI devices', IEDM tech. dig., 1981, p. 384–387.
    3. 3)
      • K.Y. Chiu , J.L. Moll , J. Manoliu . A bird's beak free local oxidation technology feasible for VLSI circuits fabrication. IEEE Trans. , 536 - 540
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