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Ultra-high doping levels of GaAs with beryllium by molecular beam epitaxy

Ultra-high doping levels of GaAs with beryllium by molecular beam epitaxy

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© The Institution of Electrical Engineers
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P-type doping levels up to 2×1020 at cm−3 in GaAs are presented using molecular beam epitaxy and beryllium as acceptor impurity. The epilayers present a perfect surface morphology and Be is not found to diffuse into the substrate, which permits the incorporation of such films into multilayer structures for device applications.

Inspec keywords: gallium arsenide; semiconductor epitaxial layers; III-V semiconductors; beryllium; semiconductor growth; molecular beam epitaxial growth; semiconductor doping

Other keywords: device applications; multilayer structures; perfect surface morphology; molecular beam epitaxy; MBE; p-type dopant; Be acceptor impurity; epilayers; GaAs; ultrahigh doping levels; GaAs:Be; III-V semiconductors

Subjects: Vacuum deposition; II-VI and III-V semiconductors; Thin film growth, structure, and epitaxy; Epitaxial growth; Semiconductor doping; Doping and implantation of impurities

References

    1. 1)
      • Mellet, R., Azoulay, R., Dugrand, L., Rao, E.V.K., Mircea, A.: `Beryllium doping of gallium arsenide metalorganic epitaxial layers', Int. symp. GaAs and related compounds, 1981, Japan.
    2. 2)
      • N. Duhamel , P. Henoc , F. Alexandre , E.V.K. Rao . Influence of growth temperature on Be incorporation in molecular beam epitaxy GaAs epilayers. Appl. Phys. Lett. , 49 - 51
    3. 3)
      • M. Ilegems . Beryllium doping and diffusion in molecular beam epitaxy of GaAs and AlxGa1−xAs. J. Appl. Phys. , 1278 - 1287
    4. 4)
      • Enquist, P., Lunardi, L., Wicks, G.W., Eastman, L.F.: `Effects of high Be doping in GaAs grown by MBE', Int. conf. on molecular beam epitaxy, 1984.
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